Chaqmaqche, FAI and Mazzucato, S and Balkan, N and Hugues, M and Hopkinson, M (2013) Gain characteristic of dilute nitride HELLISH‐VCSOA for 1.3 µm wavelength operation. physica status solidi c, 10 (4). pp. 564-566. DOI https://doi.org/10.1002/pssc.201200195
Chaqmaqche, FAI and Mazzucato, S and Balkan, N and Hugues, M and Hopkinson, M (2013) Gain characteristic of dilute nitride HELLISH‐VCSOA for 1.3 µm wavelength operation. physica status solidi c, 10 (4). pp. 564-566. DOI https://doi.org/10.1002/pssc.201200195
Chaqmaqche, FAI and Mazzucato, S and Balkan, N and Hugues, M and Hopkinson, M (2013) Gain characteristic of dilute nitride HELLISH‐VCSOA for 1.3 µm wavelength operation. physica status solidi c, 10 (4). pp. 564-566. DOI https://doi.org/10.1002/pssc.201200195
Abstract
<jats:title>Abstract</jats:title><jats:p>Optical amplification of more than 3 dB is demonstrated using the Hot Electron Light Emitting and Lasing Semiconductor Heterostructure device in a Vertical Cavity Semiconductor Optical Amplifier configuration (HELLISH‐VCSOA). The device consists of dilute nitride quantum wells Ga<jats:sub>0.35</jats:sub>In<jats:sub>0.65</jats:sub>N<jats:sub>0.02</jats:sub>As<jats:sub>0.08</jats:sub>/GaAs multiple quantum well (MQW) layers placed in the active region between the doped GaAs claddings and undoped GaAs/AlAs DBRs. Compared to standard VCSOAs in the HELLISH device, the current here does not flow across the distributed Bragg reflectors (DBR) but is injected longitudinally into the p‐ and n‐doped cladding layers. Therefore DBR layers can be undoped, and heating problems en countered in conventional VCSOAs can be avoided. Current‐voltage and spectral characteristics are measured at room temperature under different optical and electrical excitation conditions to demonstrate the possibility of employing this device for amplification purposes (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>
Item Type: | Article |
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Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science |
Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
Depositing User: | Unnamed user with email elements@essex.ac.uk |
Date Deposited: | 17 Dec 2014 16:41 |
Last Modified: | 05 Dec 2024 12:06 |
URI: | http://repository.essex.ac.uk/id/eprint/9080 |