Khalil, Hagir M and Balkan, Naci (2014) Carrier trapping and escape times in p-i-n GaInNAs MQW structures. Nanoscale Research Letters, 9 (1). p. 21. DOI https://doi.org/10.1186/1556-276x-9-21
Khalil, Hagir M and Balkan, Naci (2014) Carrier trapping and escape times in p-i-n GaInNAs MQW structures. Nanoscale Research Letters, 9 (1). p. 21. DOI https://doi.org/10.1186/1556-276x-9-21
Khalil, Hagir M and Balkan, Naci (2014) Carrier trapping and escape times in p-i-n GaInNAs MQW structures. Nanoscale Research Letters, 9 (1). p. 21. DOI https://doi.org/10.1186/1556-276x-9-21
Abstract
We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GaInNAs/GaAs capture rates resonant tunnelling p-i-n multiple quantum wells |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 03 Apr 2014 09:36 |
| Last Modified: | 05 Dec 2024 12:06 |
| URI: | http://repository.essex.ac.uk/id/eprint/9166 |
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