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Items where Author is "Tiras, E"

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Number of items: 7.

Article

Tiras, E and Tanisli, M and Balkan, N and Ardali, S and Iliopoulos, E and Georgakilas, A (2012) Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra. physica status solidi (b), 249 (6). pp. 1235-1240. DOI https://doi.org/10.1002/pssb.201147500

Chaqmaqchee, FAI and Mazzucato, S and Sun, Y and Balkan, N and Tiras, E and Hugues, M and Hopkinson, M (2012) Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3μm operation. Materials Science and Engineering: B, 177 (10). pp. 739-743. DOI https://doi.org/10.1016/j.mseb.2011.12.035

Khalil, HM and Mazzucato, S and Ardali, S and Celik, O and Mutlu, S and Royall, B and Tiras, E and Balkan, N and Puustinen, J and Korpijärvi, V-M and Guina, M (2012) Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures. Materials Science and Engineering: B, 177 (10). pp. 729-733. DOI https://doi.org/10.1016/j.mseb.2011.12.022

Gunes, M and Balkan, N and Tiras, E and Ardali, S and Ajagunna, AO and Iliopoulos, E and Georgakilas, A (2011) Superconductivity in MBE grown InN. physica status solidi c, 8 (5). pp. 1637-1640. DOI https://doi.org/10.1002/pssc.201000794

Tiras, E and Balkan, N and Ardali, S and Gunes, M and Fontaine, C and Arnoult, A (2011) Quantum lifetimes and momentum relaxation of electrons and holes in Ga<sub>0.7</sub>In<sub>0.3</sub>N<sub>0.015</sub>As<sub>0.985</sub>/GaAs quantum wells. Philosophical Magazine, 91 (4). pp. 628-639. DOI https://doi.org/10.1080/14786435.2010.525543

Tiras, E and Gunes, M and Balkan, N and Schaff, WJ (2010) In rich In<sub>1−<i>x</i> </sub> Ga<sub> <i>x</i> </sub> N: Composition dependence of longitudinal optical phonon energy. physica status solidi (b), 247 (1). pp. 189-193. DOI https://doi.org/10.1002/pssb.200945144

Tiras, E and Gunes, M and Balkan, N and Airey, R and Schaff, WJ (2009) Superconductivity in heavily compensated Mg-doped InN. Applied Physics Letters, 94 (14). p. 142108. DOI https://doi.org/10.1063/1.3116120

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