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Dilute nitride vertical-cavity gate for all-optical logic at 1.3 [micro sign]m

de Valicourt, G and Porzi, C and Guina, M and Balkan, Naci (2010) 'Dilute nitride vertical-cavity gate for all-optical logic at 1.3 [micro sign]m.' IET Optoelectronics, 4 (5). p. 201. ISSN 1751-8768

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Abstract

The authors report on the design and performance of an all-optical vertical-cavity semi-conductor gate (VCSG) based on dilute nitride (GaInNAs/GaAs) quantum wells, proposed for performing AND/OR or NAND/NOR logic functions. In particular, the authors analyse the effect of non-linear refractive index variation on the overall non-linear characteristic of the device. Compared to typical InP-based non-linear gates GaAs-based devices incorporating dilute nitride active regions are a step forward towards reducing the fabrication complexity and relaxing the design constrains by employing high-quality GaAs/AlAs distributed Bragg reflectors. The authors develop a predictive model of VCSG relying on numerical simulation. Trade-off between the operation bandwidth and the modulation depth is found out associated to a variation of the refractive index for different optical injection conditions.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
Depositing User: Jim Jamieson
Date Deposited: 05 Mar 2012 16:57
Last Modified: 05 Mar 2012 16:57
URI: http://repository.essex.ac.uk/id/eprint/2246

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