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Modelling of multijunction solar cells with dilute nitride n-i-p-i junctions

Royall, B and Balkan, N (2011) 'Modelling of multijunction solar cells with dilute nitride n-i-p-i junctions.' physica status solidi (b), 248 (5). pp. 1203-1206. ISSN 0370-1972

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Abstract

We are proposing a novel structure containing GaInNAs n–i–p–i layers with a band gap of 1 eV connected in series to a GaInP/GaAs tandem structure. The device performance is modelled using the drift diffusion conductivity model where the number and thickness of the layers are taken as adjustable parameters to achieve the optimum design. We obtain the value of short-circuit current to keep the n–i–p–i cell current matched to the other junctions in the tandem structure.

Item Type: Article
Uncontrolled Keywords: dilute nitrides; doping superlattice; GaInNAs; multijunction; solar cells
Subjects: Q Science > QC Physics
Divisions: Faculty of Science and Health > Computer Science and Electronic Engineering, School of
SWORD Depositor: Elements
Depositing User: Elements
Date Deposited: 05 Mar 2012 16:56
Last Modified: 06 Jan 2022 14:35
URI: http://repository.essex.ac.uk/id/eprint/2249

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