Royall, B and Balkan, N (2011) Modelling of multijunction solar cells with dilute nitride n–i–p–i junctions. physica status solidi (b), 248 (5). pp. 1203-1206. DOI https://doi.org/10.1002/pssb.201000787
Royall, B and Balkan, N (2011) Modelling of multijunction solar cells with dilute nitride n–i–p–i junctions. physica status solidi (b), 248 (5). pp. 1203-1206. DOI https://doi.org/10.1002/pssb.201000787
Royall, B and Balkan, N (2011) Modelling of multijunction solar cells with dilute nitride n–i–p–i junctions. physica status solidi (b), 248 (5). pp. 1203-1206. DOI https://doi.org/10.1002/pssb.201000787
Abstract
<jats:title>Abstract</jats:title><jats:p>We are proposing a novel structure containing GaInNAs n–i–p–i layers with a band gap of 1 eV connected in series to a GaInP/GaAs tandem structure. The device performance is modelled using the drift diffusion conductivity model where the number and thickness of the layers are taken as adjustable parameters to achieve the optimum design. We obtain the value of short‐circuit current to keep the n–i–p–i cell current matched to the other junctions in the tandem structure.</jats:p>
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | dilute nitrides; doping superlattice; GaInNAs; multijunction; solar cells |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 05 Mar 2012 16:56 |
| Last Modified: | 09 Nov 2023 11:14 |
| URI: | http://repository.essex.ac.uk/id/eprint/2249 |