Vickers, AJ and Tsui, ES-M and Robert, F and Lyons, V (1992) Hall mobility measurements in semi-insulating GaAs by electro-optic voltage probing. Review of Scientific Instruments, 63 (11). pp. 5487-5488. DOI https://doi.org/10.1063/1.1143376
Vickers, AJ and Tsui, ES-M and Robert, F and Lyons, V (1992) Hall mobility measurements in semi-insulating GaAs by electro-optic voltage probing. Review of Scientific Instruments, 63 (11). pp. 5487-5488. DOI https://doi.org/10.1063/1.1143376
Vickers, AJ and Tsui, ES-M and Robert, F and Lyons, V (1992) Hall mobility measurements in semi-insulating GaAs by electro-optic voltage probing. Review of Scientific Instruments, 63 (11). pp. 5487-5488. DOI https://doi.org/10.1063/1.1143376
Abstract
<jats:p>The Hall mobility in semi-insulating GaAs has been measured by probing the Hall voltage dropped across the thickness of the sample optically. This is achieved by exploiting the linear electro-optic (Pockels) effect in the material. The method only involves two electrical contacts to the sample which gives a distinct advantage over the conventional Hall or Van der Pauw techniques. It permits, in principle, the direct measurement of the time evolution of carrier populations, a useful corollary to transient photoconductivity. It also makes possible the measurement of a Hall voltage dropped across the width of a quantum well.</jats:p>
Item Type: | Article |
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Subjects: | Q Science > QC Physics |
Divisions: | Faculty of Science and Health Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
Depositing User: | Unnamed user with email elements@essex.ac.uk |
Date Deposited: | 29 Jun 2017 20:19 |
Last Modified: | 16 May 2024 16:50 |
URI: | http://repository.essex.ac.uk/id/eprint/19280 |