Homayounfar, Ali and Adams, Michael J (2008) Effects of spin relaxation rate of InGaAs/InP of quantum wells on elliptically polarised injection locked VCSELs. In: Related Materials (IPRM), 2008-05-25 - 2008-05-29.
Homayounfar, Ali and Adams, Michael J (2008) Effects of spin relaxation rate of InGaAs/InP of quantum wells on elliptically polarised injection locked VCSELs. In: Related Materials (IPRM), 2008-05-25 - 2008-05-29.
Homayounfar, Ali and Adams, Michael J (2008) Effects of spin relaxation rate of InGaAs/InP of quantum wells on elliptically polarised injection locked VCSELs. In: Related Materials (IPRM), 2008-05-25 - 2008-05-29.
Abstract
Using spin relaxation rate in the range of InGaAs/InP VCSELs subject to polarized injection, it is found that increasing the birefringence and pumping terms, can increase elliptically polarised injection locking stability for slave VCSELs. © 2000 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Published proceedings: Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Uncontrolled Keywords: | component; Vertical cavity surface emitting lasers; Injection locked lasers; Polarization; Instabilities and chaos |
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science |
| Divisions: | Faculty of Science and Health Faculty of Science and Health > Computer Science and Electronic Engineering, School of |
| SWORD Depositor: | Unnamed user with email elements@essex.ac.uk |
| Depositing User: | Unnamed user with email elements@essex.ac.uk |
| Date Deposited: | 13 Aug 2014 09:43 |
| Last Modified: | 30 Oct 2024 19:38 |
| URI: | http://repository.essex.ac.uk/id/eprint/8929 |