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Items where Author is "Sun, Y"

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Number of items: 7.

Chaqmaqchee, FAI and Mazzucato, S and Sun, Y and Balkan, N and Tiras, E and Hugues, M and Hopkinson, M (2012) Electrical characterisation of p-doped distributed Bragg reflectors in electrically pumped GaInNAs VCSOAs for 1.3μm operation. Materials Science and Engineering: B, 177 (10). pp. 739-743. DOI https://doi.org/10.1016/j.mseb.2011.12.035

Sun, Y and Balkan, N (2009) Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells. Journal of Applied Physics, 106 (7). 073704-073704. DOI https://doi.org/10.1063/1.3225997

Sun, Y and Balkan, N and Aslan, M and Lisesivdin, SB and Carrere, H and Arikan, MC and Marie, X (2009) Electronic transport in n- and p-type modulation doped Ga<sub><i>x</i></sub>In<sub>1−<i>x</i></sub>N<sub><i>y</i></sub>As<sub>1−<i>y</i></sub><i>/</i>GaAs quantum wells. Journal of Physics: Condensed Matter, 21 (17). p. 174210. DOI https://doi.org/10.1088/0953-8984/21/17/174210

Sun, Y and Balkan, N and Erol, A and Arikan, MC (2009) Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells. Microelectronics Journal, 40 (3). pp. 403-405. DOI https://doi.org/10.1016/j.mejo.2008.06.010

Yılmaz, M and Sun, Y and Balkan, N and Ulug, B and Ulug, A and Sopanen, M and Reentilä, O and Mattila, M and Fontaine, C and Arnoult, A (2009) Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells. Microelectronics Journal, 40 (3). pp. 406-409. DOI https://doi.org/10.1016/j.mejo.2008.06.003

Henning, ID and Sun, Y and Vaughan, MP and Dyson, A and Abraham, T and Adams, MJ and Moodie, DG and Rogers, DC and Dosanjh, S and Firth, R (2009) Widely tunable optoelectronic source of continuous-wave terahertz radiation. Electronics Letters, 45 (24). p. 1252. DOI https://doi.org/10.1049/el.2009.2663

Sun, Y and Erol, A and Yilmaz, M and Arikan, MC and Ulug, B and Ulug, A and Balkan, N and Sopanen, M and Reentilä, O and Mattila, M and Fontaine, C and Arnoult, A (2008) Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications. Optical and Quantum Electronics, 40 (7). pp. 467-474. DOI https://doi.org/10.1007/s11082-007-9163-8

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