Hall mobility measurements in semi-insulating GaAs by electro-optic voltage probing

<jats:p>The Hall mobility in semi-insulating GaAs has been measured by probing the Hall voltage dropped across the thickness of the sample optically. This is achieved by exploiting the linear electro-optic (Pockels) effect in the material. The method only involves two electrical contacts to the sample which gives a distinct advantage over the conventional Hall or Van der Pauw techniques. It permits, in principle, the direct measurement of the time evolution of carrier populations, a useful corollary to transient photoconductivity. It also makes possible the measurement of a Hall voltage dropped across the width of a quantum well.</jats:p>