Modelling of multijunction solar cells with dilute nitride n–i–p–i junctions

<jats:title>Abstract</jats:title><jats:p>We are proposing a novel structure containing GaInNAs n–i–p–i layers with a band gap of 1 eV connected in series to a GaInP/GaAs tandem structure. The device performance is modelled using the drift diffusion conductivity model where the number and thickness of the layers are taken as adjustable parameters to achieve the optimum design. We obtain the value of short‐circuit current to keep the n–i–p–i cell current matched to the other junctions in the tandem structure.</jats:p>